the
basic principle of sputtering coating is to allow particles with sufficiently
high energy to bombard the surface of the target material, so that the atoms in
the target material are "sputtered" and deposited on the substrate to
form a film.
gas
discharge is usually used to generate gas ionization. the positive ions bombard
the target as the cathode at high speed under the action of an electric field,
knock out atoms or molecules of the cathode target, and fly to the surface of
the substrate to be plated to deposit a thin film.
the
technological development trend of target materials is closely related to the
development trend of thin film technology in downstream application industries.
in
semiconductor industry, tungsten(w) thin films are mainly utilized as a
material for constituting electronic parts such as a gate electrode or the
wring material in w-al(tungsten-aluminum) based technology.
in
recent years, the microelectronics and semiconductor industries have developed
rapidly. depend of these electronic parts for high-integration, high-reality, high-functional
performance, high-speed processing has been increased. in order to meet the above
demand, it is essential that reduce a resistance of the thin film material. w
is notable material away the metals proposed for gate and interconnection
metallization. tungsten has a low electrical resistance and is also excellent
in heat resistance, so that w has attracted engineer’s attention as a fortune
material for constituting the electrodes and wires.
ultra
high purity(uhp) tungsten targets produced by xiamen honglu are applied by
physical vapor deposition(pvd) techniques, deposited thin films have high
uniformity, minimum particle generation during sputtering, and desired
electrical properties, which can perfectly satisfy the extreme pursuit of
materials in the semiconductor industry.
